BYV34-600_1
? NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 01 — 4 October 2007 2 of 9
NXP Semiconductors
BYV34-600
Dual recti?er diode ultrafast
3. Ordering information
4. Limiting values
5. Thermal characteristics
Table 2. Ordering information
Type number
Package
Name
Description
Version
BYV34-600 TO-220AB plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead
TO-220AB
SOT78
Table 3. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VRRM
repetitive peak reverse voltage - 600 V
VRWM
crest working reverse voltage - 600 V
VR
reverse voltage square waveform;
δ
= 1.0;
Tmb
≤
138
°C
- 600 V
IO(AV)
average output current square waveform;
δ
= 0.5;
Tmb
≤
107
°C; both diodes conducting
-20A
IFRM
repetitive peak forward current t = 25
μs; square waveform;
δ
= 0.5;
Tmb
≤
107
°C; per diode
-20A
IFSM
non-repetitive peak forward
current
t = 10 ms; sinusoidal waveform; per
diode
- 120 A
t = 8.3 ms; sinusoidal waveform; per
diode
- 132 A
Tstg
storage temperature
?40 +150
°C
Tj
junction temperature - 150
°C
Table 4. Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Rth(j-mb)
thermal resistance from junction to
mounting base
with heatsink compound;
per diode; see
Figure
1
- - 2.4 K/W
with heatsink compound;
both diodes conducting
- - 1.6 K/W
Rth(j-a)
thermal resistance from junction to ambient in free air - 60 - K/W
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